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APM2800B
N-Channel Enhancement Mode MOSFET with Schottky Diode
Features
MOSFET
Pin Description
*
20V/3A , RDS(ON)=50m(typ.) @ VGS=4.5V RDS(ON)=90m(typ.) @ VGS=2.5V
* * * *
Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Low Forward Voltage
(1) G
Top View of SOT-25
(5) D
(4) C
SBD
Applications
*
Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems
S (2)
A (3)
N-Channel MOSFET
SBD
Ordering and Marking Information
APM2800 Lead Free Code Handling Code Temp. Range Package Code Package Code B : SOT-25 Operating Junction Temp. Range C : -55 to 150C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code
APM2800B :
M80X
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Jun., 2005 1 www.anpec.com.tw
APM2800B
Absolute Maximum Ratings
Symbol [MOSFET] VDSS VGSS ID* IDM* IS* TJ TSTG PD* RJA* [SBD] VRRM IFSM
Note: *Surface Mounted on 1in2 pad area, t 10sec.
(TA = 25C unless otherwise noted)
Rating Unit
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300s Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25C TA=100C VGS=4.5V
20 10 3 10 1 150 -55 to 150 0.83 0.3 150 W C/W V A A C
Repetitive Peak Reverse Voltage Maximum Peak Forward Surge Current
20 5.5
V A
Electrical Characteristics
Symbol [MOSFET] Parameter
(TA = 25C unless otherwise noted)
APM2800B Min. Typ. Max.
Test Condition
Unit
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250A IDSS VGS(th) IGSS RDS(ON) VSDa
a
20 1 30 0.45 0.6 50 90 0.7 1 100 70 110 1.3
V A V nA m V
Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage
VDS=16V, VGS=0V T J=85C VDS=VGS, IDS=250A VGS=10V, VDS=0V VGS=4.5V, IDS=3A VGS=2.5V, IDS=1.7A ISD=0.5A, VGS=0V
Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Jun., 2005
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APM2800B
Electrical Characteristics (Cont.)
Symbol [MOSFET] Dynamic Characteristics b Ciss Coss Crss td(ON) Tr td(OFF) Tf Qg Qgs Qgd [SBD] VR VF1 VF2 IR C
b
(T A = 25C unless otherwise noted)
APM2800B Min. Typ. Max.
Parameter
Test Condition
Unit
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
VGS=0V, VDS=20V, Frequency=1.0MHz
255 70 50 6 12 10 23 12 ns 5 12 6 pF
VDD=10V, RL=10, IDS=1A, VGEN=4.5V, RG=6
Gate Charge Characteristics b Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=10V, VGS=4.5V, IDS=3A 5 0.7 0.7 6.5 nC
Reverse Voltage Forward Voltage Reverse Current Junction Capacitance
IR=0.5mA IF=10mA IF=500mA VR=15V VR=10V, Frequency=1.0MHz
20 0.4 0.5 200 45
V V V A pF
Notes: a: Pulse test ; pulse width 300s, duty cycle 2% b: Guaranteed by design, not subject to production testing
Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Jun., 2005
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APM2800B
Typical Characteristics
N-Channel MOSFET Power Dissipation
1.0
4.0 3.5
Drain Current
0.8
3.0
ID - Drain Current (A)
0 20 40 60 80 100 120 140 160
Ptot - Power (W)
0.6
2.5 2.0 1.5 1.0 0.5
0.4
0.2
0.0
0.0
0
20
40
60
80 100 120 140 160
Tj - Junction Temperature (C)
Tj - Junction Temperature (C)
Safe Operation Area Normalized Transient Thermal Resistance
30 10
2 1
Thermal Transient Impedance
Duty = 0.5
ID - Drain Current (A)
Rd s(o n)
Lim it
300s 1ms 10ms
0.2 0.1
1
0.1
0.05 0.02 0.01 Single Pulse Mounted on 1in pad o RJA : 150 C/W
2
0.1
100ms 1s DC TA=25 C
o
0.01 0.01
0.1
1
10
100
0.01 1E-4
1E-3
0.01
0.1
1
10 30
VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Jun., 2005
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APM2800B
Typical Characteristics (Cont.)
Output Characteristics
10 9 8 VGS= 3,4,5,6,7,8,9,10V
Drain-Source On Resistance
0.14 0.12 VGS=2.5V
RDS(ON) - On - Resistance ()
ID - Drain Current (A)
7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 2V 2.5V
0.10 0.08 0.06 0.04 0.02 0.00
VGS=4.5V
0
2
4
6
8
10
VDS - Drain - Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
10 9 8
Gate Threshold Voltage
1.8 1.6 IDS =250A
Normalized Threshold Voltage
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25
ID - Drain Current (A)
7 6 5 4 3 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Tj=125 C
o o
Tj=25 C
Tj=-55 C
o
0
25
50
75 100 125 150
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (C)
Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Jun., 2005
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APM2800B
Typical Characteristics (Cont.)
Drain-Source On Resistance
1.8 VGS = 4.5V 1.6 IDS = 3A
Tj=150 C
o
Source-Drain Diode Forward
10
Normalized On Resistance
1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 RON@Tj=25 C: 50m 0 25 50 75 100 125 150
o
IS - Source Current (A)
1
Tj=25 C
o
0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Tj - Junction Temperature (C)
VSD - Source - Drain Voltage (V)
Capacitance
500 Frequency=1MHz
Gate Charge
5 VDS= 10V IDS= 3A 4
400
VGS - Gate - source Voltage (V)
20
C - Capacitance (pF)
300 Ciss
3
200
2
100 Crss 0
Coss
1
0
4
8
12
16
0
0
1
2
3
4
5
6
VDS - Drain - Source Voltage (V)
QG - Gate Charge (nC)
Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Jun., 2005
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APM2800B
Typical Characteristics (Cont.)
SBD IF - VF
6
IR - VR
0.1
IR - Reverse Current (A)
IF - Forward Current (A)
1
o C 125 T A= o C 25 T A=
0.01
150 C
o
1E-3
100 C 75 C
o
o
75 o 5 C 0o C
1E-4
0.1
50 C
o
100 o C
1E-5
TA=25 C
o
1E-6
0.01 0.0
0.2
0.4
0.6
0.8
1.0
1E-7
0
3
6
9
12
15
VF - Forward Voltage (V)
VR - Reverse Voltage (V)
C - VR
200 Frequency=1MHz
C - Capacitance (pF)
150
100
50
0
0
5
10
15
20
25
VR - Reverse Voltage (V)
Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Jun., 2005
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APM2800B
Packaging Information
SOT-23-5
e1
5
4 E1 E
1
2
3
e
b
D
A2
A
a
L1
A1
L2
L
Dim A A1 A2 b D E E1 e e1 L L1 L2 N
Millimeters Min. 0.95 0.05 0.90 0.30 2.8 2.6 1.5 0.95BSC 1.90BSC 0.35 0.20 BSC 0.5 5 0 10 0 0.7 0.020 0.55 0.014 Max. 1.45 0.15 1.30 0.50 3.00 3.00 1.70 Min. 0.037 0.002 0.035 0.011 0.110 0.102 0.059
Inches Max. 0.057 0.006 0.051 0.019 0 . 118 0 . 118 0.067 0.037BSC 0.07 4BSC 0.022 0.008 BSC 0.028 5 10
Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Jun., 2005
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APM2800B
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
TP Ramp-up
tp Critical Zone T L to T P
Temperature
TL Tsmax
tL
Tsmin Ramp-down ts Preheat
25
t 25 C to Peak
Time
Classificatin Reflow Profiles
Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (T L) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds
6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface.
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Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Jun., 2005
APM2800B
Classificatin Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process - Package Peak Reflow Temperature s Package Thickness Volume mm 3 Volume mm 3 <350 350 <2.5 mm 240 +0/-5C 225 +0/-5C 2.5 mm 225 +0/-5C 225 +0/-5C
Table 2. Pb-free Process - Package Classification Reflow Temperatures Package Thickness Volume mm 3 Volume mm 3 Volume mm 3 <350 350-2000 >2000 <1.6 mm 260 +0C* 260 +0C* 260 +0C* 1.6 mm - 2.5 mm 260 +0C* 250 +0C* 245 +0C* 2.5 mm 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0C. For example 260C+0C) at the rated MSL level.
Reliability Test Program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles
Carrier Tape & Reel Dimensions
t E Po P P1 D
F W
Bo
Ao
D1
Ko
Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Jun., 2005
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APM2800B
Carrier Tape & Reel Dimensions
T2
J C A B
T1
Application
A 1781
B
C
J
T1 8.4 2 P1
T2 1.5 0.3 Ao
72 1.0 13.0 + 0.2 2.5 0.15 D D1 1.5 +0.1 Po 4.0 0.1
W 8.0+ 0.3 - 0.3 Bo
P 4 0.1 Ko 1.4 0.1
E 1.75 0.1 t 0.20.03
SOT-23-5
F
3.5 0.05 1.5 +0.1
2.0 0.1 3.15 0.1 3.2 0.1
(mm)
Cover Tape Dimensions
Application SOT-23-5 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000
Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Jun., 2005
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